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CX50101 10150 TTINY ST72T 1N5387B HT49R50 10200CT SG317AT
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  sot-363 UMD22N general purpose transisto rs (dual transistors) features z both the dta143z chip and dtc143z chip in a package 1 z mounting possible with sot-36 3 automatic mounting machines. z transistor elements are independ ent, eliminating interference. z mounting cost and area be cut in half. marking: d22 equivalent circuit dtr1 dtc143z absolute maximum ratings(ta=25 ) parameter symbol limits unit supply voltage v cc 50 v input voltage v in -5~+30 v i o 100 output current i c(max) 100 ma power dissipation pd 150 mw junction temperature tj 150 storage temperature tstg -55~150 electrical characteristics (ta=25 ) parameter symbol min. typ max. unit conditions v i(off) 0.5 v cc =5v, i o =100 a input voltage v i(on) 1.3 v v o =0.3v, i o =5ma output voltage v o(on) 0.1 0.3 v i o /i i =5ma/0.25ma input current i i 1.8 ma v i =5v output current i o(off) 0.5 a v cc =50v, v i =0 dc current gain g i 80 v o =5v, i o =10ma input resistance r 1 3.29 4.7 6.11 k ? - resistance ratio r 2 /r 1 8 10 12 - transition frequency f t 250 mhz v ce =10v, i e =-5ma, f=100mhz www.htsemi.com semiconductor jinyu 1 date:2011/ 05
dtr2 dta143z absolute maximum ratings(ta=25 ) parameter symbol limits unit supply voltage v cc -50 v input voltage v in -30~+5 v i o -100 output current i c(max) -100 ma power dissipation pd 150 mw junction temperature tj 150 storage temperature tstg -55~150 electrical characteristics (ta=25 ) parameter symbol min. typ max. unit conditions v i(off) -0.5 v cc =-5v, i o =-100 a input voltage v i(on) -1.3 v v o =-0.3v, i o =-5ma output voltage v o(on) -0.1 -0.3 v i o /i i =-5ma/-0.25ma input current i i -1.8 ma v i =-5v output current i o(off) -0.5 a v cc =-50v, v i =0 dc current gain g i 80 v o =-5v, i o =-10ma input resistance r 1 3.29 4.7 6.11 k ? - resistance ratio r 2 /r 1 8 10 12 - transition frequency f t 250 mhz v ce =-10v, i e =5ma, f=100mhz UMD22N www.htsemi.com semiconductor jinyu 2 date:2011/ 05


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